A JL-SDR-IMPATT Device with Improved Efficiency

Dipan Bandyopadhyay, Subir Kumar Sarkar

Abstract


An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N-N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+–N–N+) structure without any requirement of physical doping. As the present device works on the principle of a junctionless channel, variability and short channel effects are significantly reduced as compared to the conventional TFET though the requirement of an extra gate increases a few fabrication steps. Further, efficiency more than conventional SDR IMPATT diode is achievable without any physical doping. 


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DOI: http://dx.doi.org/10.1590/2179-10742017v16i2682

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