EXPERIMENTAL MEASUREMENTS OF SOME OPTOELECTRONIC DEVICES BEFORE AND AFTER GAMMA IRRADIATION

Mohamed B. El_Mashade, M. Ashry, Sh. M. Eladl, M. S. Rageh

Abstract


Experimental measurements of the radiation effect on two terminal phototransistor and Light Emitting Diode (LED) are presented. The I-V, CV, and G-V characteristics have been measured at different light intensities by using Agilent semiconductor parameter analyzer, model-4155B, Hp C-V meter, model-4280A. A Lux meter, model-Lx-101, is set against to a xenon arc lamp to sense and evaluate the intensity of the incident light on the optoelectronic device under test. The effect of gamma irradiation dose on the performance of these devices is also presented. The results show that the light always increases the values of the static quantities concerning these devices. While gamma rays decreases all the measured quantities concerning these devices.

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References


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