Antonio Sandro Verri, Luciana Chaves Barbosa, Hong Keun Lee


This paper presents the design, construction and experimental results of a class A GaAs MESFET power amplifier for the 1.7 - 2.1 GHz frequency range, designed for highpower and high-linearity operation. Gain amplification is performed by a two-stage MMIC module, followed by a two-stage MIC power amplifier. The amplifier presents a linear gain of 43 dB and delivers more than 36 dBm at 1 dB gain compression, with 49 dBm of third order intercept point. This amplifier was developed at University of São Paulo under R&D Center of Telebrás (Brazilian Telecom) coordination, the research results being property of Telebrás (contracts Telebrás-USP JDPqD 516/93 and JDPqD 586/94).

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